IRL3103D2 preliminary pd 9.1660 7/16/97 description the fetky family of copackaged hexfet power mosfets and schottky diodes offer the designer an innovative board space saving solution for switching regulator applications. a low on resistance gen 5 mosfet with a low forward voltage drop schottky diode and minimized component interconnect inductance and resistance result in maximized converter efficiencies. the to-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. the low thermal resistance and low package cost of the to-220 contribute to its wide acceptance throughout the industry. l copackaged hexfet ? power mosfet and schottky diode l generation 5 technology l logic level gate drive l minimize circuit inductance l ideal for synchronous regulator application parameter max. units i d @ t c = 25c continuous drain current, v gs @ 10v 54 i d @ t c = 100c continuous drain current, v gs @ 10v 34 a i dm pulsed drain current ? 220 p d @t a = 25c power dissipation 2.0 w p d @t c = 25c power dissipation 70 w linear derating factor 0.56 w/c v gs gate-to-source voltage 16 v t j operating junction and -55 to + 150 t stg storage temperature range soldering temperature, for 10 seconds 300 (1.6mm from case ) mounting torque, 6-32 or m3 srew 10 lbf?in (1.1n?m) c absolute maximum ratings v dss = 30v r ds(on) = 0.014 w i d = 54a fetky tm mosfet & schottky rectifier parameter typ. max. units r q jc junction-to-case CCC 1.8 r q ja junction-to-ambient CCC 62 c/w thermal resistance g d s t o -22 0 ab
IRL3103D2 parameter min. typ. max. units conditions i f (av) ( schottky) mosfet symbol showing the i sm pulsed source current integral reverse (body diode) ? CCC CCC p-n junction and schottky diode. v sd1 diode forward voltage CCC CCC 1.3 v t j = 25c, i s = 32a, v gs = 0v ? v sd2 diode forward voltage CCC CCC 0.6 v t j = 25c, i s = 3.0a, v gs = 0v ? t rr reverse recovery time CCC 51 77 ns t j = 25c, i f = 32a q rr reverse recovery charge CCC 47 71 nc di/dt = 100a/s ? t on forward turn-on time intrinsic turn-on time is negligible (turn-on is dominated by l s +l d ) ? repetitive rating; pulse width limited by max. junction temperature. ( see fig. 10 ) notes: ? pulse width 300s; duty cycle 2%. ? uses irl3103 data and test conditions body diode & schottky diode ratings and characteristics 5.0 220 a parameter min. typ. max. units conditions v (br)dss drain-to-source breakdown voltage 30 CCC CCC v v gs = 0v, i d = 250a d v (br)dss / d t j breakdown voltage temp. coefficient CCC 0.037 CCC v/c reference to 25c, i d = 1ma ? CCC CCC 0.014 v gs = 10v, i d = 32a ? CCC CCC 0.019 w v gs = 4.5v, i d = 27a ? v gs(th) gate threshold voltage 1.0 CCC CCC v v ds = v gs , i d = 250a g fs forward transconductance 23 CCC CCC s v ds = 25v, i d = 34a ? CCC CCC 0.25 ma v ds = 30v, v gs = 0v CCC CCC 35 v ds = 24v, v gs = 0v, t j = 125c gate-to-source forward leakage CCC CCC 100 na v gs = 16v gate-to-source reverse leakage CCC CCC -100 v gs = -16v q g total gate charge CCC CCC 44 i d = 32a q gs gate-to-source charge CCC CCC 14 nc v ds = 24v q gd gate-to-drain ("miller") charge CCC CCC 24 v gs = 4.5v, see fig. 6 ? t d(on) turn-on delay time CCC 9.0 CCC v dd = 15v t r rise time CCC 210 CCC ns i d = 34a t d(off) turn-off delay time CCC 20 CCC r g = 3.4 w, v gs =4.5v t f fall time CCC 54 CCC r d = 0.43 w, ?? between lead, CCC CCC 6mm (0.25in.) from package and center of die contact c iss input capacitance CCC 2300 CCC v gs = 0v c oss output capacitance CCC 1100 CCC v ds = 25v c rss reverse transfer capacitance CCC 310 CCC ? = 1.0mhz, see fig. 5 c iss input capacitance CCC 3500 CCC v gs = 0v, v ds = 0v mosfet electrical characteristics @ t j = 25c (unless otherwise specified) r ds(on) static drain-to-source on-resistance i gss i dss drain-to-source leakage current l d internal drain inductance nh pf CCC CCC g d s l s internal source inductance 7.5 CCC CCC 4.5 s d g
IRL3103D2 fig 1. typical output characteristics fig 2. typical output characteristics 1 10 100 1000 0.1 1 10 100 i , drain-to-source current (a) d v , drain-to-source volta g e ( v ) ds a 20 s pulse w idth t = 25c j vgs top 15v 12v 10v 8.0v 6.0v 4.0v 3.0v bottom 2.5v 2.5v fig 3. typical reverse output characteristics fig 4. typical reverse output characteristics 1 10 100 1000 0.1 1 10 100 i , drain-to-source current (a) d v , drain-to-source volta g e ( v ) ds a vgs top 15v 12v 10v 8.0v 6.0v 4.0v 3.0v bottom 2.5v 2.5v 20 s pulse width t = 150c j 0 10 20 30 0.0 0.2 0.4 0.6 0.8 v , drain-to-source volta g e ( v ) ds a vg s t o p 10v 8.0v 6.0v 4.0v 2.0v bottom 0.0v 0.0v 20s pulse w idth t = 150c c 0 10 20 30 0.0 0.2 0.4 0.6 0.8 1.0 v , drain-to-source volta g e ( v ) ds 20s pulse w idth t = 25c c a vg s t o p 10v 8.0v 6.0v 4.0v 2.0v bottom 0.0v 0.0v i s , source-to-drain current ( a ) i s , source-to-drain current ( a )
IRL3103D2 fig 5. typical capacitance vs. drain-to-source voltage fig 6. typical gate charge vs. gate-to-source voltage fig 7. maximum drain current vs. case temperature fig 8. typical transfer characteristics 25 50 75 100 125 150 0 10 20 30 40 50 60 t , case temperature ( c) i , drain current (a) c d 1 10 100 1000 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 t = 25c t = 150c j j gs v , gate-to-source volta g e (v) d i , drain-to-source current (a) a v = 15v 20s pulse width ds 0 20 40 60 80 0 3 6 9 12 15 q , total gate char g e (nc) v , gate-to-source voltage (v) g gs i = d 32a v = 15v ds v = 24v ds 0 1000 2000 3000 4000 5000 1 10 100 ds v , drain-to-source v olta g e ( v ) a v = 0v, f = 1mhz c = c + c , c shorted c = c c = c + c gs iss g s g d ds rss g d os s ds g d c iss c oss c rss c, capacitance ( pf )
IRL3103D2 fig 10. maximum effective transient thermal impedance, junction-to-case 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 t , rectan g ular pulse duration (sec) 1 thjc d = 0.50 0.01 0.02 0.05 0.10 0.20 single pu lse (thermal response) a therm al response (z ) p t 2 1 t dm n otes: 1. d uty factor d = t / t 2. peak t = p x z + t 1 2 j dm thjc c fig 9. normalized on-resistance vs. temperature -60 -40 -20 0 20 40 60 80 100 120 140 160 0.0 0.5 1.0 1.5 2.0 t , junction temperature ( c) r , drain-to-source on resistance (normalized) j ds(on) v = i = gs d 10v 54a
IRL3103D2 lead assignments 1 - gate 2 - drain 3 - sou rc e 4 - drain - b - 1.32 (.052) 1.22 (.048) 3x 0.55 (.022) 0.46 (.018) 2.92 (.115) 2.64 (.104) 4.69 (.185) 4.20 (.165) 3x 0.93 (.037) 0.69 (.027) 4.06 (.160) 3.55 (.140) 1.15 (.045) m in 6.47 (.255) 6.10 (.240) 3.78 (.149) 3.54 (.139) - a - 10.54 (.415) 10.29 (.405) 2.87 (.113) 2.62 (.103) 15.24 (.600) 14.84 (.584) 14.09 (.555) 13.47 (.530) 3x 1.40 (.055) 1.15 (.045) 2.54 (.100) 2x 0.36 (.014) m b a m 4 1 2 3 notes: 1 d im e n s io n in g & to l e r a n c ing p e r a n s i y 1 4.5m , 1 9 82. 3 o u t lin e c o n f o r m s to je d e c o u t lin e to -2 20 a b . 2 controlling dimension : inch 4 heatsink & lead measurements do n ot include burrs. part number international rectifier lo g o example : this is an irf1010 w it h as se m b ly lo t c o de 9b1m assembly lo t co de date code (yyww) yy = year ww = week 9246 irf1010 9b 1m a part marking information to-220ab package outline to-220ab outline dimensions are shown in millimeters (inches) part number international rectifier lo g o example : this is an irf1010 w it h as se m b ly lo t c o de 9b1m assembly lo t co de date code (yyww) yy = year ww = week 9246 irf1010 9b 1m a world headquarters: 233 kansas st., el segundo, california 90245, tel: (310) 322 3331 european headquarters: hurst green, oxted, surrey rh8 9bb, uk tel: ++ 44 1883 732020 ir canada: 7321 victoria park ave., suite 201, markham, ontario l3r 2z8, tel: (905) 475 1897 ir germany: saalburgstrasse 157, 61350 bad homburg tel: ++ 49 6172 96590 ir italy: via liguria 49, 10071 borgaro, torino tel: ++ 39 11 451 0111 ir far east: k&h bldg., 2f, 30-4 nishi-ikebukuro 3-chome, toshima-ku, tokyo japan 171 tel: 81 3 3983 0086 ir southeast asia: 315 outram road, #10-02 tan boon liat building, singapore 0316 tel: 65 221 8371 http://www.irf.com/ data and specifications subject to change without notice. 6/97
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